| 摘要 |
PURPOSE:To realize the high diffusion potential, the restriction of negative resistance effect, and the restriction of the diffusion of p-type dopant, by forming a structure composed of a first conductivity type semiconductor layer, a high resistance layer, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, on both sides of an active layer. CONSTITUTION:On both sides of a semiconductor active layer 12 formed on a semiconductor substrate 11, the following are formed in order from the lower side: a first conductivity type semiconductor layer 11, a semiconductor high resistance layer 16, a first conductivity type semiconductor layer 15 and a second conductivity type semiconductor layer 14. A current constriction layer 17 is constituted. A large diffusion potential generates between the first conductivity type semiconductor layer 15 and the second conductivity type semiconductor layer 14, and a carrier injected from the second conductivity type semiconductor layer 14 vanishes in the first conductivity type semiconductor layer 15, so that the carrier does not penetrate into the high resistance layer 16, and the negative resistance effect does not generate. Further, the diffusion of dopant from the second conductivity type semiconductor layer 14 is interruped in the first conductivity type semiconductor layer 15, and the width of a negative resistance is kept constant. |
