| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent a water mark from being formed on a boundary between hydrophobic material and hydrophilic material by a method wherein hydrophobia material, is turned into hydrophilic material, and then a wafer is rinsed. SOLUTION: After a third and a fourth air valve, 52a and 52b, are closed to shut off the supply of de-ionized water, a fifth air valve 58 is regulated to open a tube 57 of solution which turns an object hydrophilic. A solution which turns an object hydrophilic is fed to the upside of a wafer 70 from a feeder 60 of the solution. At this point, the above solution fed to the wafer 70 turns a hydrophobic material layer (e.g. bare silicon and polycrystalline silicon left after an oxide film is removed) formed on the wafer 70 hydrophilic. For instance, hydrogen peroxide aqueous solution is suitable for a solution which turns an object hydrophilic.</p> |
