发明名称 Chip sized semiconductor device
摘要 A chip sized semiconductor device includes a semiconductor chip having upper and lower surfaces. The chip has electrodes formed on the upper surface thereof. An electrically insulating passivation film is formed on the upper surface of the semiconductor chip, except for areas where the electrodes exist. An anisotropic conductive sheet has an upper surface providing with a circuit pattern formed thereon and a second surface being adhered to the passivation film. The circuit pattern has inner and outer connecting portions. The electrically insulating film covers the upper surface of the anisotropic conductive sheet so that the outer connecting portions of the circuit pattern are exposed to be connected to external connecting terminals. The anisotropic conductive sheet is partially pressed at positions correspond to the electrodes, so that the inner portions of the circuit pattern are electrically connected to said electrodes of the semiconductor chip.
申请公布号 US5677576(A) 申请公布日期 1997.10.14
申请号 US19960618807 申请日期 1996.03.20
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 AKAGAWA, MASATOSHI
分类号 H01L23/532;(IPC1-7):H01L23/48;H01L29/40 主分类号 H01L23/532
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