| 摘要 |
This semiconductor nonvolatile storage device is provided with a nonvolatile memory element block (1), and a circuit (3) for generating a program voltage for subjecting a MONOS type nonvolatile memory element of the block to the multivalued storing of data. The program voltage generating circuit (3) comprises a circuit (5) for setting a program level of input data, one operation amplifier (17), four resistors (19, 21, 23, 25) of the same resistance value, a circuit for adding a set program level and a reference voltage to each other, and a waveform shaping circuit (10). The input data are converted into a voltage value in a predetermined range which varies linearly in accordance with the magnitude of the input data, and a program voltage of a predetermined pulse width is generated. This enables a program voltage to be generated by a simple structure without increasing the area of a chip and without being influenced by the scatter of a circuit element occurring during the manufacture thereof.
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