Semiconductor device with a trench gate and method of manufacturing the same

摘要

A semiconductor device has trenches formed on the surface of a semiconductor. The device passes a main current through a channel formed between the trenches and controls the main current with the use of gate electrodes (7) buried in the trenches. The main current directly controlled by the gate electrodes flows in parallel with the surface of the semiconductor and is distributed vertically to the surface of the semiconductor. The width W of the channel is freely increased without regard to the surface area of the semiconductor.