| 摘要 |
PROBLEM TO BE SOLVED: To prolong the electromigration life in an interconnection by forming allowance parts extruding plugs at overlapped parts of two interconnection layers; the spacing between the plugs is wider than specified plug spacing. SOLUTION: On interconnection routes running on an upper and lower interconnection layers of a semiconductor device, specified spacing between adjacent plugs 3 is L1 while the spacing L2 between plugs 3a is wider than L1. A first layer interconnection 4a and second layer interconnection 5b are overlapped at the plugs 3a and have allowance parts 1 extruding from the plugs 3a at the overlapped parts. A CMOS semiconductor device is produced e.g. such that the first layer interconnections 4a, 4b and second layer interconnections 5a, 5b have a line width of 0.6μm, the plugs 3, 3a have a diameter of 0.6μm, spacing L1 is 5μm, spacing L2 is 50μm and allowance 1 is about 0.2μm in the length and width directions of the interconnection.
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