发明名称 WIRING STRUCTURE AND SEMICONDUCTOR DEVICE USING IT
摘要 PROBLEM TO BE SOLVED: To restrict electromigration(EM) over the whole wiring by providing a folded structure wiring, and setting the length of the wiring of a non-folded part to that not exceeding critical length specified applied current density through the wiring. SOLUTION: When a wiring includes parts each having different widths and folded parts, those parts demonstrate a substantial dam effect for atom flow fluxes, the same effect is obtained when the wiring is divided, and the effect is particularly obvious when a ratio of the amountΔof wiring displacement in the width direction with respect to the wiring width W is 0.4 or more in the adjacent non-folded parts Lp through the folded part, and the effect is further obvious when the ratio is 1.5 or less. Accordingly, the length of tire non-folded part is set to be less than a critical length defined by cut-rent density actually applied. As a result, EM is restricted over the whole wiring.
申请公布号 JPH09266205(A) 申请公布日期 1997.10.07
申请号 JP19960074114 申请日期 1996.03.28
申请人 TOSHIBA CORP 发明人 KANEKO HISAFUMI;HASUNUMA MASAHIKO
分类号 H01L21/3205;H01L23/52;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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