发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To reduce power consumption and to speed operation by reducing the consumed current flowing in bit lines and also the loading capacity connected to the bit lines. SOLUTION: The bit line BL0 is divided into four bit lines, and the divided bit lines BL0A-BL0D are respectively connected to four memory blocks A-D composed of plural memory cells, pass transistors 1-4 and precharge transistors 5-8. When a memory block A is selected by an address, the corresponding pass transistor 1 alone is turned on and the pass transistors 2-4 of the other memory blocks are turned off. Furthermore only the precharge transistor 5 of the memory block A is turned off, and the precharge transistors 6-8 of the other memory blocks are kept on to hold the precharge state and read the data out from the selected memory block.</p>
申请公布号 JPH09265781(A) 申请公布日期 1997.10.07
申请号 JP19960076801 申请日期 1996.03.29
申请人 SANYO ELECTRIC CO LTD 发明人 SHIMIZU MASAHIKO;OONISHI NORIHISA
分类号 G11C11/41;G11C11/417;G11C17/18;(IPC1-7):G11C11/41 主分类号 G11C11/41
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