发明名称 |
Method of fabricating an SRAM device with a self-aligned thin film transistor structure |
摘要 |
A process for fabricating SRAM cells, including MOSFET devices, as well as thin film transistor structures, has been developed. The process features self-alignment of the MOSFET polysilicon gate structure to the polysilicon gate structure of the thin film transistor. Self-alignment is accomplished via a photolithographic and dry etching patterning procedure, applied to a combination of polysilicon, and insulator layers, resulting in the desired polysilicon gate structures for both the MOSFET and thin film transistor devices.
|
申请公布号 |
US5674770(A) |
申请公布日期 |
1997.10.07 |
申请号 |
US19960721664 |
申请日期 |
1996.09.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE, JIN-YUAN;WUU, SHOU-GWO |
分类号 |
H01L21/8244;H01L27/11;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/8244 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|