| 摘要 |
PROBLEM TO BE SOLVED: To provide the device by which a silicon single crystal can be produced without breaking the heater even at the time of using a heater having a large diameter, passing a large current through the heater and applying a high intensity magnetic field. SOLUTION: In this device provided with a crusible, a heater, electrodes and a magnet, the heater has plural heat generating parts, two main electrode parts and also, at least two auxiliary electrode parts. Further, the device is provided with at least two insulating heater supports for supporting the heater through the auxiliary electrode parts and the number of heat generating parts placed between each of the heater supports and the corresponding one of the electrodes or that of heat generating parts placed between every adjacent two of the heater supports when some adjacent heater supports exist, is <=4 and also, the thickness of each of the heat generating parts is >=25mm. |
