FERROELECTRIC STORAGE DEVICE

摘要

A ferroelectric storage device which can further reduce the fluctuation of the reference potential in a reference memory cell system. The storage device is provided with a reference potential generating circuit which generates a reference potential by averaging potentials read out from two ferroelectric capacitors CD00 and CD20 for reference memory cells storing high-level data and two ferroelectric capacitors CD10 and CD30 for reference memory cells storing low-level data.