发明名称 |
A synchronous semiconductor memory integrated circuit, a method for accessing said memory and a system comprising such a memory |
摘要 |
<p>The invention relates to a synchronous semiconductor memory integrated circuit which operates by use of edges of an external clock signal, said memory comprising a memory block; an input for an external clock signal; an address input means providing a first address as an output in response to a first edge of said external clock signal, and a second address as an output in response to a second edge of said external clock signal; access means for accessing a location in said memory block corresponding to said first address and said second address; and control means for receiving an external control input indicating a read/write mode defining a read mode and/or a write mode, and for changing said read/write mode based on a difference of level of said external control input at two successive edges of said external clock signal.</p><p>Furthermore the invention relates to a method for accessing such a memory and a system comprising such a memory.</p> |
申请公布号 |
EP0798733(A2) |
申请公布日期 |
1997.10.01 |
申请号 |
EP19970109202 |
申请日期 |
1989.11.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HARLIN, ROY EDWARD;HERRINGTON, RICHARD ARTHUR |
分类号 |
G06F12/02;G11C11/401;G06F3/153;G06F12/00;G06F12/04;G06T1/60;G09G5/39;G09G5/393;G09G5/395;G11C11/407;G11C7/10;G11C7/22;G11C11/406;G11C11/408;(IPC1-7):G11C8/00 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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