Method of fabrication of an optical component on a cristalline silicon substrate

摘要

The barrier layer (30) is silica free of dopants formed by oxidation of the substrate or silicon nitride and has thickness between 100 and 2 000 nm, preferably between 200 and 1 000 nm. The doped silicon layer (6) is deposited on the barrier layer at a high temperature suitable for flame hydrolysis deposition. The doped and barrier layers are both eliminated in the region to be processed and the quality of the component formed in this region is conditional on the quality of the crystalline substrate. The processing is defined by the crystal planes of the substrate on which an etch resistant layer is formed and the planes are exposed to attack to form a non-zero dihedral angle with the surface.