| 摘要 |
PURPOSE:To prevent a device isolation capacity from being lowered at a contact region by a method wherein a width in the short-piece direction of a semiconductor activation region is formed in such a way that a contact part used to make this region conductive is narrower than other parts. CONSTITUTION:In a semiconductor device where an activation region 11 has been formed in a semiconductor substrate 10, e.g., a DRAM, a width LSDG in the short-piece direction in the activation region 11 is formed in such a way that a contact part 15 used to make this region conductive is narrower than other parts. By this setup, even when, during formation of a contact, a dislocation of a contact region is caused on a part where a diffusion length of an impurity has been extended, it is possible to prevent a device isolation capacity from being lowered in the contact region without narrowing the width LSDG of the substrate activation region. Accordingly, it is possible to increase a driving capacity for a transistor and to increase a capacitance for a capacitor. |
