KOJUDENZAIRYOOYOBIDOZAIRYOOMOCHIITAKONDENSA

摘要

PURPOSE:To obtain a high dielectric material for the formation of a high quality thin film capacitor capable of low temperature sintering by making the high dielectric material via the mixture of a specific material with a specific base material. CONSTITUTION:10 to 95wt.% Pb(Mg1/3Nb2/3)O3 and PbTiO3 is mixed with a base material of Pb(Fe1/2Nb1/2)X(Fe2/3W1/3)1-XO3 (X=0 to 1), or the aforesaid materials are mixed by 10 to 50 weight percentage. As a result, it is possible to apply a low temperature sintering process thereto and a high dielectric material for forming a high quality thin film capacitor is available therefrom. The high dielectric material so obtained is patterned to thin film of 10-20mum on a substrate having a conductor formed via a sputtering process and the like, and an electrode conductor is formed thereupon, thereby enabling the easy manufacture of a high quality capacitor at a low temperature.