| 摘要 |
PURPOSE:To achieve cost reduction by forming a semiconductor single crystal grown from a signal nucleus to the free surface of a substrate and forming a control circuit for controlling the driving of an electrothermal converter element at least to said semiconductor monocrystal. CONSTITUTION:The nucleus non-forming surface of an Si-oxide film low in nucleus forming density is formed to a substrate 3 and Si-nitride is formed in a size of about several mum to form a nucleus forming surface and, as the seed of an Si single crystal, the built-up film 11 of the Si single crystal is formed to the whole of the substrate in a CVD apparatus. Next, an electrode pad 6, a control circuit 12 and a wiring part are formed on the built-up film 11. Subsequently, a protective layer is formed on a control circuit 12 and, then, the elements necessary for an ink jet recording apparatus such as an electrothermal converter element 1, electrodes 2, novel orifices 7 are formed. Since the wiring required during this process can be performed using the film formation and photolithography of an electric wire material such as Al simultaneously with the wiring of the electrothermal converter element 1 and the control circuit 12, a mounting process is not especially required and cost reduction can be attained. |
