| 发明名称 |
Thyristor with reduced minority carrier lifetime and method of producing the same |
| 摘要 |
<p>A method for manufacturing a thyristor (100) and a thyristor (100) are provided in which the lifetime of minority carriers is controlled to improve the trade-off relationship between an ON-state voltage and a turn-off time and attain a high frequency and a low loss. Shielding members (110, 120) formed of metal plates are provided respectively in spaces above a plane on which a cathode electrode (106) is provided and a plane on which an anode electrode (105) is provided. <IMAGE></p> |
| 申请公布号 |
EP0797257(A2) |
申请公布日期 |
1997.09.24 |
| 申请号 |
EP19970104524 |
申请日期 |
1997.03.17 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;JAPAN ATOMIC ENERGY RESEARCH INSTITUTE |
发明人 |
AKIYAMA, HAJIME;HONDA, KENICHI;MORITA, YOUSUKE;YOSHIKAWA, MASAHITO;OHSHIMA, TAKESHI |
| 分类号 |
H01L29/744;H01L21/322;H01L21/332;H01L29/10;H01L29/32;H01L29/74;(IPC1-7):H01L29/744 |
主分类号 |
H01L29/744 |
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