| 摘要 |
PROBLEM TO BE SOLVED: To control the phase relaxation time and phase interference time of electron waves by using donor impurities, acceptor impurities or lattice defects as spin scattering impurities and quantitatively clearing the relationship of impurities and the places and density of the lattice defects. SOLUTION: A semiconductor device has at least one of a carrier conductive path 5 formed of a semiconductor 6, impurities capable of being used as a donor, etc., existing in or near the carrier conductive path, being charged at odd values and capable of supplying the carrier conductive path 5 with carriers, and a lattice defect. A distance from a semiconductor conductive-path region is set so that a formula is made smaller than a timeτwhen electrons travel in the carrier conductive path and a formula is made shorter than an electron - electron scattering time and the phase relaxation time of carriers when the volume density of impurities or the lattice defect within a range from (r) to r+dr is expressed by ND (r), the surface density of electrons in the carrier conductive path by NS and the time byτ.
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