| 摘要 |
PROBLEM TO BE SOLVED: To decrease influences of the proximity effect and to obtain an extrafine resist pattern which is close to the aimed dimension and has a little dimensional error by maintaining a substrate to be treated in an acid atmosphere before irradiation for patterning. SOLUTION: First, a tungsten silicide film 5 is formed on a substrate 6 to be treated and then a photoresist layer 1 is formed thereon by spin coating and prebaked. Then the substrate is dipped in an acetic acid soln. to impregnate the resist with the acid, then washed with pure water to remove the excess acid on the rear surface of the substrate and dried. Thus, by maintaining the substrate in an acid atmosphere, an enough amt. of acid which does not appear as a pattern in the developing process is made to permeate in the resist layer 1. After the treatment, the substrate is exposed to electron beams to draw a line pattern by an electron beam drawing device. Then the resist is baked after exposure, cooled and developed with a TMAH soln. |
