| 摘要 |
PROBLEM TO BE SOLVED: To reduce a residue deposition in a CVD chamber by a method wherein there are provided with a process chamber for storing a substrate, an inlet for giving a process substance, an exhaust outlet for removing it and a ceramic layer covering an exhaust outlet part. SOLUTION: A pedestal at a center in a process chamber 100 holds a semiconductor wafer at a wafer process position on a circular face 145 of a plane pedestal. The face 145 is positioned so as to be parallel to and approach a process gas supply face plate 122 having a hole 121 through which process gas passes when entering a chamber. More specifically, the deposited process gas passes through an inflow manifold 126, passes through an opened blocker plate 124, and passes through the plane circular gas supply face plate 122 to flow. The gas is discharged to an annular exhaust space part 222, passes from the exhaust space 222 under a gas inspection window part 232 through a gas flow passage 239 extended downwardly and a vacuum stoppage valve 240, and flows to an exhaust flow outlet 226 coupled with an external vacuum pump.
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