| 摘要 |
PROBLEM TO BE SOLVED: To reduce the current density in the element of a Gunn diode, improve the reliability and the oscillation efficiency of the element by specifying the mean concn. gradient of an n-type active layer of the diode and the thickness in this layer. SOLUTION: A Gunn diode has an n-type InP semiconductor active layer 101 held between n<+> -type layers 107 and 109 having high doner impurity concn. and electrode metals 111 and 113 bonded to the respective other ends thereof. The doner impurity concn. of other n-type layer than n<-> -type layers has a concn. gradient in a direction normal to the junction between the n-type layer and n<+> -type layer and its mean concn. gradient meets both G>(A1 N/L)exp(-NL/S1 ) and G<(A2 N/L)exp(-NL/S2 ) and the thickness of the n<-> -type layer is set to 15-35% the thickness of the n-type layer where L is thickness of the n-type layer, S1 =0.87×10<12> cm<-2> , S2 =0.87×10<12> cm<-2> , A1 =2.0 and A2 =9.0.
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