| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine processing method which prevents defective erosion during etching and improves processing dimensional accuracy. SOLUTION: In the title fine processing method, a silicon nitride film 2 is formed on a silicon substrate 1, an etching mask 2a is thereafter formed on the substrate by photoetching and then the substrate is immersed in etchant for etching. Before the silicon nitride film 2 is formed on the silicon substrate 1, an oxynitride layer 1a is formed on the substrate surface to make it oxynitride. In the fine processing method, a surface of the silicon substrate 1 is made oxynitride in advance and the silicon nitride film 2 is formed; therefore, a nitrogen element in an oxynitride layer thereunder increases and the part forms an interface which resists chemical erosion.
|
