PHASE SHIFT MASK BLANK AND PHASE SHIFT MASK

摘要

PROBLEM TO BE SOLVED: To provide a halftone type halftone phase shift mask blank with which the prevention of electrification by the charge accumulation and static electricity at the time of electron beam plotting is made possible by simple film constitution and a halftone type phase shift mask made therefrom. SOLUTION: This halftone type phase shift mask blank (a) is composed by sputtering a target contg. a transition metal and silicon at a ratio of 30:1 to 1:20 by atomic ratio in an atmosphere contg. oxygen and/or nitrogen and forming a light translucent film 2a consisting of the transition metal, the silicon, and the oxygen and/or nitrogen as the main constituting elements on a transparent substrate 1. This halftone type phase shift mask (b) is composed by forming the mask patterns consisting of light transparent parts 3 and light translucent parts 2 on the light translucent film 2a of the halftone type phase shift mask blank (a).