| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device provided with a HgSx Se1-x layers and also the HgSx Se1-x on a p-type II-VI group compound semiconductor layer, p-type III-V group compound semiconductor layer or a p-type IV group semiconductor layer, which is capable of forming the layers safely and also with a high controllability even at the time of using a molecular beam epitaxy method. SOLUTION: In a semiconductor laser using II-VI group compound semiconductor, a HgSx Se1-x contact layer 10 is provided on a p-type ZnSe contact layer 8, and when a p-side electrode 11 is provided on the contact layer 10, the contact layer 10 is formed by a molecular beam epitaxy method using an evaporation method, a solid phase diffusion method or a compound raw material. As raw materials for forming the HgSx Se1-x contact layer 10, the HgS and HgSe are utilized. |
