FORMATION OF RESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To attain stable patterning property by improving the infiltration of a developer to a resist film and enabling to decrease the generation of crack or the stripping of a pattern in developing. SOLUTION: The forming method is by applying a resist containing a polymer or a copolymer containing a repeating unit having a protected alkali soluble group and capable of making the compound alkali soluble by releasing a protecting group with an acid and an acid generating agent generating the acid by radiation exposure on a substrate to be processed and the formed resist film is exposed selectively by the radiation capable of causing the generation of the acid from the acid generating agent. And the forming method is constituted so that a latent image formed on the resist film in the exposing process is developed with an organic alkali aq. solution in the presence of a surfactant containing a higher alkyl group.