| 摘要 |
In a ferroelectric memory, when data is read out from a memory cell, for the purpose of minimizing a variation of the voltage on the pair of data signal lines caused by factor other than the current caused due to the polarization of the ferroelectric capacitor, the number of memory cells connected to each one data signal line is limited. Thus, a voltage not smaller than the coercive voltage can be applied between the opposing electrodes of the ferroelectric capacitor, with the result that a sufficient read-out signal voltage can be obtained.
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