发明名称 Semiconductor memory device having faulty cells
摘要 <p>A nonvolatile memory apparatus includes a control unit, a main storage medium with an electrically reloadable nonvolatile memory adapted to be operable even when faulty memory cells exist therein, and a storage region storing registered address values of faulty regions of the main storage medium containing the faulty memory cells. Data which is stored in the electrically reloadable nonvolatile memory is divided into blocks, each block having a plurality of data to be administrated and which is assigned an access address by the control unit. An administrative information region is provided in each block. The control unit carries out access requests of the main storage medium and the administration of faulty regions and the number of occurrences of reloading of respective memory cells of the main storage medium.</p>
申请公布号 AU3832297(A) 申请公布日期 1997.09.16
申请号 AU19970038322 申请日期 1996.11.29
申请人 HITACHI, LTD. 发明人 KUNIHIRO KATAYAMA;TAKAYUKI TAMURA;SATOSHI WATATANI;KIYOSHI INOUE;SHIGEMASA SHIOTA;MASASHI NAITO
分类号 G06F11/20;G11C7/00;G11C11/34;G11C16/06;G11C29/00;H04L12/28 主分类号 G06F11/20
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