发明名称 |
OS RECTIFYING SCHOTTKY AND OHMIC JUNCTION AND W/WC/TIC OHMICCONTACTS ON SIC |
摘要 |
<p>Metallic osmium on SiC (either .beta. or .alpha.) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC (12), Os (20) forms an abrupt Schottky rectifying junction having essentially unchanged operating characteristics to at least 1050 ~C and Schottky diodes that remain operable to 1175 ~C and a barrier height over 1.5 eV. On p-type SiC, Os forms an ohmic contact with specific contact resistance of 10-4 ohm-cm2. Ohmic and rectifying contacts to a TiC layer (30) on a SiC substrate (12) are formed by depositing a WC layer (32) over the TiC layer (30), followed by a metallic W layer (34). Such contacts are stable to at least 1150 ~C. Electrodes (38) connect to the contacts either directly or via a protective bonding layer (36) such as Pt or PtAu alloy.</p> |
申请公布号 |
CA2248803(A1) |
申请公布日期 |
1997.09.12 |
申请号 |
CA19972248803 |
申请日期 |
1997.03.04 |
申请人 |
3C SEMICONDUCTOR CORPORATION |
发明人 |
PARSONS, JAMES D. |
分类号 |
H01L29/73;H01L21/04;H01L21/28;H01L21/331;H01L21/338;H01L21/822;H01L23/49;H01L27/04;H01L29/45;H01L29/47;H01L29/74;H01L29/749;H01L29/78;H01L29/812;H01L29/861;H01L29/872;(IPC1-7):H01L21/283;H01L29/161 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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