| 摘要 |
<p>PURPOSE:To surely prevent a very small amount of impurities which is not removed hitherto from being mixed into refined gas by purging a part of refined gas from the gas retaining parts existing in refined gas flow passages. CONSTITUTION:The impurities contained in gas is removed by causing the gas to flow through refining units A, B, and the refined gas is taken out from the refining units through the refined gas flow passages 6a, 6b, 7. A part of refined gas is purged from the gas retaining parts R1a, R1b, R2a, Rb, R3 existing in the refined gas flow passages through purge pipes L1a, L1b, L2a, L2b, L3. As a result, a very small amount of impurities which is not removed hitherto is surely prevented from being mixed into the refined gas. Consequently, such various high purity gases are obtained that are required in the production of highly integrated semiconductor of such as submicron class.</p> |
