SiGe thin film semiconductor device or SiGe layer structure and method of fabrication.

摘要

A thin film semiconductor device includes: a substrate having an insulating surface; a semiconductor layer containing silicon and germanium formed on the substrate; a gate insulating film formed on the semiconductor layer; and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a thermal oxide film formed by thermally oxidizing a surface of the semiconductor layer.