Writing circuit for non-volatile memory

摘要

A writing circuit for non-volatile memory capable of preventing the structure of the circuit from becoming complicated in an integrated circuit from the points of view of logic and layout by reducing the number of kinds of control signal voltages. The circuit includes a first NMOS transistor N1, a first PMOS transistor P1, a second NMOS transistor N2 which serves as a non-volatile memory write terminal and a depression type MOS transistor D1 having a source to which a control signal PGM for controlling the output condition of the above-mentioned write terminal is applied.