发明名称 SPUTTERING TARGET FOR FORMING FERROELECTRIC FILM AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To produce a sputtering target for forming a ferroelectric film free from the generation of peeling and cracking even being subjected to sputtering by high electric power and to provide a method for producing the same. SOLUTION: BaCO3 powder having <=50ppm S content, SrCO3 powder and TiO2 powder are used to produce a sputtering target for forming a ferromagnetic film composed of BaTi double oxide, SrTi double oxide and BaSrTi triple oxide, and the content of S in the obtd. sputtering target for forming a ferroelectric film composed of BaTi double oxide, SrTi double oxide and BaSrTi triple oxide is limited to <=50ppm.
申请公布号 JPH09235667(A) 申请公布日期 1997.09.09
申请号 JP19960040860 申请日期 1996.02.28
申请人 MITSUBISHI MATERIALS CORP 发明人 MORI AKIRA
分类号 C04B35/46;C04B35/645;C23C14/34;H01L21/316;H01L21/8242;H01L27/108 主分类号 C04B35/46
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