| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device where a contact and a stack are hardly misaligned with each other, and the stack is hardly separated off even if it is very small in size. SOLUTION: A contact hole is bored in an interlayer insulating film, and a polysilicon film 23 to serve as a storage electrode and a BPSG film to serve as a core are successively formed on all the surface. The BPSG film and the polysilicon film 23 are patterned into stacks, and a polysilicon film 27 is formed on each side wall of the stack. Then, a BPSG film 28 is farmed on all the surface so as to make its upside higher than the upside of the stack, and the BPSG film 28 is removed by etching until the upside of the BPSG film of a core is exposed, and then the BPSG film 28 is etched back until the BPSG film of the core is totally removed. |
