Method to prevent formation of defects during multilayer interconnect processing

摘要

A process is provided for forming a hard mask over an aluminum-containing layer for patterning and etching the aluminum-containing layer to define interconnects. The process comprises depositing the material comprising the hard mask at a temperature that is within the range of about 100 DEG C. below the sputtering temperature of the aluminum-containing metal and the sputtering temperature of the aluminum-containing metal.