| 摘要 |
PROBLEM TO BE SOLVED: To make a compd. semiconductor layer thin and form a good pn junction by depositing an n<+> -, n<-> , p- an p<+> -indium gallium phosphide films on a wafer. SOLUTION: A Si crystal wafer is composed of an n<+> -Si 1, nSi 2 and p<+> -Si 3. An n<+> -, n-, p- an p<+> -InGaP films 4, 5, 6 7 are deposited on the wafer. Since the dislocation and the crystal grain boundary of InP and InGaP are electrically inactive and never short a pn junction, unlike GaAs. As the result there is no need of forming the pn junction of the InGaP photovoltaic power generator to form a dual system with a Si photovoltaic power generator at a position apart from an InGaP/Si hetero interface and the entire InGaP can be made 1-2μm or less thick and hence the compd. semiconductor layer can be made thin. |
