发明名称 METHOD FOR EVALUATING PATTERN TRANSFER CHARACTERISTIC IN PHOTOMASK, METHOD FOR DESIGNING PHOTOMASK, EXPOSURE METHOD AND PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To set the two (set tolerances) among the exposure tolerance, pattern size tolerance and defocus tolerance and to evaluate the the pattern transfer characteristic in a photomask based on the expected values of the remaining tolerances (unset tolerances). SOLUTION: Plural evaluation patterns in a photomask are set first of all in process A, and a set tolerance is set. The amt. related to an unset tolerance is then changed as a variable, and a transfer pattern is obtained based on the evaluation pattern in process B. The magnitude of the transfer pattern is obtained at the position of the transfer pattern corresponding to the plural measurement points preset on the transfer pattern in process C. Subsequently, the maximum value of the variables at the set tolerance is obtained based on the magnitude as the unset tolerance in process D. The set tolerance is then changed in process E, and processes B to D are repeated. Thereafter, the expected value of the unset tolerance is obtained based on the probability density function showing the distribution of the set tolerances and the unset tolerances.</p>
申请公布号 JPH09236906(A) 申请公布日期 1997.09.09
申请号 JP19960069367 申请日期 1996.02.29
申请人 SONY CORP 发明人 SUGAWARA MINORU
分类号 G03F1/32;G03F1/68;G03F1/70;G03F7/26;G06F17/50;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/32
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