| 摘要 |
PROBLEM TO BE SOLVED: To prevent a semiconductor substrate from being warped so as not to decrease a solar cell device in manufacturing yield and to restrain a process for manufacturing a solar cell device from becoming complicated. SOLUTION: A P<+> layer 1a is formed on the one primary surface of a semiconductor substrate 1 which contains P-type impurities, an N layer 1b is formed on the other primary surface of the substrate 1, and an electrode is provided on each of the primary surfaces of the semiconductor substrate 1 for the formation of a solar cell device, wherein the P<+> layer 1a is formed as a boron silicate glass layer 5 is formed on the primary surface of the semiconductor substrate 1, then the boron silicate glass layer 5 and the P<+> layer 1a are removed from the semiconductor substrate 1 except from the one primary surface. Phosphorus is diffused into the semiconductor substrate 1 using the boron silicate glass layer 5 as a mask, a region of the side of the semiconductor substrate 1 where phosphorus is diffused is removed, and the N layer 1b is formed on the other primary surface of the semiconductor substrate 1. |
