| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of an all word activation test in a semiconductor memory device having a word line-driving circuit, of a bootstrap method. SOLUTION: During a test, a main word line-driving voltage MWn from a main word line MWLn is once stopped to be impressed or supplied to each word line-driving circuit WDn1-WDnn in a memory array. However, complementary transistor-driving voltages Fxi, Fxi- in pairs of an Fxn driver circuit, are kept in active states VPP, Vss. Therefore, a gate node N1 in each word line-driving circuit WDn1-WDnn is charged to be at a reference level VPP-Vth via a dividing transistor Q2 while the main word line-driving voltage MWn is stopped. A predetermined time later, when the main word line-driving voltage MWn in an H level VPP is impressed, a complete self boot or bootstrap is effected because a potential of the gate node N1 sufficiently reaches the reference level VPP-Vth. A potential of a sub word line SWLn1-SWLnn is accordingly surely brought to be at the H level VPP. |
