摘要 |
<p>A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of said continuously moving circumferential wall to be exposed to said microwave plasma. A microwave plasma CVD apparatus suitable practicing said method.</p> |
申请人 |
CANON K.K., TOKIO/TOKYO, JP |
发明人 |
MATSUYAMA, JINSHO, OHTA-KU, TOKYO, JP;KARIYA, TOSHIMITSU, OHTA-KU, TOKYO, JP;FUJIOKA, YASUSHI, OHTA-KU, TOKYO, JP;TAKEI, TETSUYA, OHTA-KU, TOKYO, JP;NAKAGAWA, KATSUMI, OHTA-KU, TOKYO, JP;KANAI, MASAHIRO, OHTA-KU, TOKYO, JP;ECHIZEN, HIROSHI, OHTA-KU, TOKYO, JP |