发明名称 Verfahren und Anordnung zur kontinuierlichen Bildung einer durch Mikrowellen-Plasma-CVD niedergeschlagenen grossflächigen Dünnschicht
摘要 <p>A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of said continuously moving circumferential wall to be exposed to said microwave plasma. A microwave plasma CVD apparatus suitable practicing said method.</p>
申请公布号 DE69030140(T2) 申请公布日期 1997.09.04
申请号 DE1990630140T 申请日期 1990.06.27
申请人 CANON K.K., TOKIO/TOKYO, JP 发明人 MATSUYAMA, JINSHO, OHTA-KU, TOKYO, JP;KARIYA, TOSHIMITSU, OHTA-KU, TOKYO, JP;FUJIOKA, YASUSHI, OHTA-KU, TOKYO, JP;TAKEI, TETSUYA, OHTA-KU, TOKYO, JP;NAKAGAWA, KATSUMI, OHTA-KU, TOKYO, JP;KANAI, MASAHIRO, OHTA-KU, TOKYO, JP;ECHIZEN, HIROSHI, OHTA-KU, TOKYO, JP
分类号 C23C16/511;C23C16/54;H01J37/32;H01L21/205;H01L29/872;H01L31/076;H01L31/20;(IPC1-7):H01L31/20;C23C16/24 主分类号 C23C16/511
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