| 摘要 |
PURPOSE:To protect a connecting section against a disconnection or prevent it from growing anomalous in resistance value so as to improve an island-like thin film in manufacturing yield by a method wherein an island-like thin film is connected with an external lead-out electrode without making any differences in level. CONSTITUTION:Impurity is injected into a prescribed region on the surface of a semiconductor substrate 1 through an impurity diffusion or an ion implantation for the formation of highly concentrated impurity region 2, and then an island-like thin film 3 is formed between the impurity regions 2 on the surface of the substrate 1. The end of the island-like thin film 3 is formed extending to the regions 2 and metal electrodes 4 are formed contacting with a part of the regions 2. The level difference between the surface of the impurity non- injected part of the substrate 1 and the highly concentrated impurity regions 2 is small, wherefore the disconnection caused by the difference in level can be prevented. And, as the island-like thin film 3 is formed after the formation of the impurity regions 2, the island-like thin film 3 is prevented from agglomerating at the contacting section of it with the metal electrodes 4, so that the contacting section is prevented from increasing in resistance. |
