| 摘要 |
PURPOSE: To deposit a thin film excellent in crystallinity and orientation while doping a halogen element with high controllability by introducing chemical species containing a halogen element into an atmosphere for depositing a II-VI compound semiconductor. CONSTITUTION: When a II-VI compound semiconductor is deposited by MOCVD, chemical species containing a halogen element is introduced into the atmosphere for depositing the II-VI compound semiconductor. The halogen element can be introduced by any one of following methods. (a). HCL, HBr, HI or CL2 gas diluted with a carrier gas is fed from a cylinder 10. (b). Vapor of volatile liquid, e.g. HBr, HI, Br2 , Cl2 , encapsulated in the cylinder 10 is diluted and fed into a reaction chamber. (c). An liquid organic compound containing a halogen element encapsulated in a bubbler 15 and a carrier gas are bubbled and fed as a gas. (d). Solid state iodine is fed into the bubbler 15 and heated to produce sublimated iodine which is carried on the carrier gas. |
