发明名称 Overlay measuring method using correlation function
摘要 <p>In a method of manufacturing a semiconductor integrated circuit device, a resist pattern is formed on a lower layer pattern of a semiconductor substrate using a mask. An image signal along a line extending on the lower layer pattern and the resist pattern is generated by an optical system. Based on the image signal, a center position of the resist pattern and a center position of the lower layer pattern are calculated using correlation calculation and an overlay error of the resist pattern to the lower layer pattern is determined. When the overlay error falls within a predetermined range, a next manufacturing process such as an etching process and an ion implantation process to the semiconductor substrate is executed. When the overlay error does not falls within a predetermined range, the resist pattern is removed, and a relative position between the semiconductor substrate and the mask is adjusted. Thereafter, the above steps are repeated. &lt;IMAGE&gt;</p>
申请公布号 EP0793147(A1) 申请公布日期 1997.09.03
申请号 EP19970102050 申请日期 1997.02.10
申请人 NEC CORPORATION 发明人 KAWAI, KENJI
分类号 G03F9/00;G03F7/20;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F9/00
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