| 摘要 |
A process for producing a semiconductor substrate, in particular an SOI substrate, is provided which comprises a step of bonding a principal surface of a first substrate (11) to a principal surface of a second substrate (15), the first substrate (11) being an Si substrate in which at least one layer of non-porous thin film (13) is formed through a porous Si layer (12), a step of exposing the porous Si layer in a side surface of a bonding substrate comprised of the first substrate (11) and the second substrate (15), a step of dividing the porous Si layer by oxidizing the bonding substrate, and a step of removing porous Si (12) and oxidized porous Si layer (16) on the second substrate (15) separated by the division of the porous Si layer. The first substrate (11) may be reused.
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