发明名称 Method for producing semiconductor device having alignment mark
摘要 An alignment method for a semiconductor device having a conductive thin film on a conductive substrate surface across an insulation film, comprises steps of: forming in the insulation film, at least two apertures exposing the substrate surface therein; selectively depositing a conductive material in the apertures thereby forming a stepped portion in at least one of said apertures; and forming the conductive thin film at least on said insulation film. The alignment is conducted utilizing the stepped portion.
申请公布号 US5663099(A) 申请公布日期 1997.09.02
申请号 US19950536791 申请日期 1995.09.29
申请人 CANON KABUSHIKI KAISHA 发明人 OKABE, TAKAHIKO;MONMA, GENZO;YUZURIHARA, HIROSHI
分类号 H01L23/544;(IPC1-7):H01L21/441 主分类号 H01L23/544
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