发明名称 |
Method for producing semiconductor device having alignment mark |
摘要 |
An alignment method for a semiconductor device having a conductive thin film on a conductive substrate surface across an insulation film, comprises steps of: forming in the insulation film, at least two apertures exposing the substrate surface therein; selectively depositing a conductive material in the apertures thereby forming a stepped portion in at least one of said apertures; and forming the conductive thin film at least on said insulation film. The alignment is conducted utilizing the stepped portion.
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申请公布号 |
US5663099(A) |
申请公布日期 |
1997.09.02 |
申请号 |
US19950536791 |
申请日期 |
1995.09.29 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
OKABE, TAKAHIKO;MONMA, GENZO;YUZURIHARA, HIROSHI |
分类号 |
H01L23/544;(IPC1-7):H01L21/441 |
主分类号 |
H01L23/544 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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