| 摘要 |
A gate drive circuit for a power transistor provides improved dielectric isolation and protection against inadvertent turn ON of the power transistor. The gate drive circuit includes a first circuit means for providing a bias power signal and a trigger pulse signal to a second circuit means in response to a control signal from an external control circuit connected to said first circuit means. The bias power signal and the trigger pulse signal are coupled from the first circuit means to the second circuit means by magnetic induction through a first and a second coupling transformer, respectively, with the first and second coupling transformers thereby providing separate pathways for coupling of the bias power signal and the trigger pulse signal between the first and second circuit means. The first and second coupling transformers further provide dielectric isolation between the first and second circuit means along each of the separate pathways.
|
