| 摘要 |
PROBLEM TO BE SOLVED: To prevent a semiconductor single crystal from having the dislocation by liquid level vibration at the time the melt surface falls and a raw material supplying pipe detaches from the melt when the raw material supply ends in production of the semiconductor single crystal by a continuous charging method. SOLUTION: The bottom end face of the raw material supplying pipe 24 to be mounted at the raw material supplying section of the apparatus for producing the semiconductor single crystal is inclined at a prescribed angleθfrom the axial center of the raw material supplying pipe 24 and further, the bottom end face is provided with a notch 24a. The notch 24a initiates the detachment of the raw material supplying pipe 24 from the liquid at the time the pipe detaches from the melt by falling of the melt surface, and further, the detachment thereof from the liquid is improved by the inclination of the bottomed face. Then, the fall of the melt lifted by adhesion to the bottom end face of the raw material supplying pipe and the consequent occurrence of the melt surface vibration encountered heretofore do not arise. If the pressure of the raw material supplying section is equaled to the pressure of the crystal growing section after the end of the raw material supply, the melt level in the material supplying pipe falls and, therefore, the detachment of the pipe from the liquid is additionally improved.
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