| 摘要 |
PURPOSE: To enable a substrate large in level difference to be subjected to a light exposure process large enough in depth of a focus so as to stably form a resist pattern on the substrate. CONSTITUTION: A photoresist film 3 formed on a silicon substrate 1 possessed of a difference 2 in surface level is exposed to light using a mask possessed of a first light transmitting region 4A used for forming an optically positive image on the lower surface of the silicon substrate 1 and a second light transmitting region 4B used for forming an optically reversed image on the upper surface of the silicon substrate 1 under such a condition that the distance between the focal points of the positive image and the negative image is set coincident with the difference 2 in surface level. |
