| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor integrated semiconductor optical detector with the reduced manufacturing cost and with no deterioration of a frequency response and further with a high speed operation in which optical detector a hetero bipolar transistor and a waveguide type semiconductor optical detector are integrated on the same semiconductor substrate. SOLUTION: A transistor integrated semiconductor optical detector includes a hetero bipolar transistor and a waveguide type semiconductor optical detector integrated on at least the same semiconductor substrate 1. In the optical detector, a base layer 4 of the hetero bipolar transistor is used as a first conductivity type contact layer in the waveguide type semiconductor optical detector, and likewise a collector layer 3 as an optical absorption layer, and a subcollector layer 2 as a second conductivity type contact layer. A bandgap wavelength of the subcollector layer 2 is set to be shorter than the wavelength of incident light into the waveguide type optical detector but longer than a bandgap wavelength of the semiconductor substrate 1. |
