| 摘要 |
<p>A chromium/refractory metal alloy deposited thin film conductor (14) for use in high temperature semiconductor integrated circuit electronics suitable for operating temperatures as high as 400 °C. The thin film conductor (14) can be formed from a chromium tungsten alloy layer deposited on an integrated circuit surface (12). The chromium tungsten layer is then etched to form the desired conductor (10) pattern. The deposited chromium tungsten thin film conductor (10) is then heated in an atmosphere of hydrogen containing some water vapor, causing some of the chromium to diffuse to the surface and oxidize. This produces an excellent conformal passivating film (11) of Cr2O3. This also produces excellent adhesion to SiO2 and Si3N4. Further, the Cr enhances the surface mobility of sputter deposited refractory metal atoms yielding large, nonfibrous grains which enhance conformal step coverage and reduces electromigration.</p> |
