| 摘要 |
<p>The invention relates to a write-once read-many memory element (1), or an assembly thereof, which comprises a substrate (2) on which electrodes (3) are provided and between which a layer (4) is sandwiched, which memory element includes a conjugated polymer or oligomer as well as a dopant. This memory element can be written by temporarily applying a sufficiently high voltage to the electrodes so that the electroconductivity of the layer is permanently reduced.</p> |
